SUM60N10-17-E3

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

SUM60N10-17-E3 datasheet

• Маркировка
  SUM60N10-17-E3
• Производитель
  Vishay Intertechnology
• Описание
  Vishay Intertechnology SUM60N10-17-E3 Configuration: Single Continuous Drain Current: 60 A Continuous Drain Current Id: 60A Current - Continuous Drain (id) @ 25?° C: 60A Drain Source Voltage Vds: 100V Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 25 S Gate Charge (qg) @ Vgs: 100nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 2663920 Input Capacitance (ciss) @ Vds: 4300pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount On Resistance Rds(on): 19mohm Package / Case: D??Pak, TO-263 (2 leads + tab) Power - Max: 3.75W Power Dissipation: 3750 mW Rds On (max) @ Id, Vgs: 16.5 mOhm @ 30A, 10V Rds(on) Test Voltage Vgs: 10V Resistance Drain-source Rds (on): 0.0165 Ohm @ 10 V Series: TrenchFET?® Threshold Voltage Vgs Typ: 4V Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 250?µA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 16.5 mOhms Fall Time: 10 ns Forward Transconductance gFS (Max / Min): 25 S Rise Time: 12 ns Factory Pack Quantity: 800 Typical Turn-Off Delay Time: 30 ns Other Names: SUM60N10-17-E3, SUM60N10-17-E3TR
• Количество страниц
  6 шт.
• Форматы файла
  HTML, PDF

  (Для просмотра требуется Adobe Acrobat Reader)

Скачать datasheet SUM60N10-17-E3.pdf
Файл формата Pdf 100,56 KB